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- Currently displaying 181 - 199 of 199 publications
Thermodynamic evidence for surfactant behaviour of Sb in the growth of Ge on Si(001)
Surface Science
(1998)
398
l308
Structural studies of Si(001)/Sb(0.25 ML)-c(4 × 4)
Applied Surface Science
(1998)
123
48
Atomic structure of a monolayer of Ge on Si(001)(2 × 1)
Surface Review and Letters
(1998)
5
97
(doi: 10.1142/S0218625X98000207)
A study of atomic vibrations on Si(001)(2 × 1)-Ge
Applied Surface Science
(1998)
123-124
151
Atomic structure of the GaAs(001)-β2(2 × 4) surface
Surface Review and Letters
(1998)
5
219
(doi: 10.1142/s0218625x98000402)
Comparative study of Sb bonding on group-IV semiconductor (001) substrates
Physical Review B
(1997)
56
9221
(doi: 10.1103/PhysRevB.56.9221)
Theoretical studies of atomic vibrations on the surface
Physical Review B Condensed Matter and Materials Physics
(1997)
56
4656
(doi: 10.1103/PhysRevB.56.4656)
Electrostatic implications for Sb-mediated growth of Ge on the Si(001) surface
Surface Science
(1997)
384
l886
Energetic evidence for mixed dimer growth on the Si(001)/Ge(2 × 1) surface
Surface Science
(1997)
377-379
887
Phonon modes for the symmetric and asymmetric dimer models of the Si(001)(2 × 1) surface
Surface Science
(1997)
377
335
Theoretical studies of GaAs(001)-Ge(2x1) and (1x2) structures
Surface Science
(1996)
352
416
(doi: 10.1016/0039-6028(95)01172-2)
Atomic geometry and bonding on the GaAs(001)-β2(2×4) surface from ab initio pseudopotential calculations
Physical Review B
(1996)
53
12589
(doi: 10.1103/physrevb.53.12589)
Bonding and structure of the Si(001)(2 × 1)-Sb surface
Surface Science
(1996)
352
411
(doi: 10.1016/0039-6028(95)01171-4)
Density functional and quasi-particle calculations on the InP(110) surface
Surface Science
(1996)
352
776
(doi: 10.1016/0039-6028(95)01227-3)
DENSITY-FUNCTIONAL AND QUASI-PARTICLE CALCULATIONS ON THE GAP(110) SURFACE
Surface Science
(1995)
333
1238
(doi: 10.1016/0039-6028(95)00286-3)
Simple approach to self-energy corrections in semiconductors and insulators.
Phys Rev B Condens Matter
(1993)
48
4388
(doi: 10.1103/PhysRevB.48.4388)
